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A large challenge with Plasma Wakefield Acceleration lies in creating a plasma with a profile and length that properly match the electron beam. Using a laser-ionized plasma source provides control in creating an appropriate plasma density ramp. Additionally, using a laser-ionized plasma allows for an accelerator to run at a higher repetition rate. At the Facility for Advanced Accelerator Experimental Tests, at SLAC National Accelerator Laboratory, we ionize hydrogen gas with a 225 mJ, 50 fs, 800 nm laser pulse that passes through an axicon lens, imparting a conical phase on the pulse that produces a focal spot with an intensity distribution described radially by a Bessel function. This paper overviews the diagnostic tests used to characterize and optimize the focal spot along the meter-long focus. In particular, we observe how wavefront aberrations in the laser pulse impact the peak intensity of the focal spot. Furthermore, we discuss the impact of nonlinear effects caused by a 6 mm, CaF2 vacuum window in the laser beam line. 

At the Facility for Advanced Accelerator Experimental Tests (FACET-II) accelerator, a pair of 10 GeV high-current electron beams is used to investigate Plasma Wakefield Acceleration (PWFA) in plasmas of different lengths. While PWFA has achieved astonishingly high accelerating gradients of tens of GeV/m, matching the electron beam into the plasma wake is necessary to achieve a beam quality required for precise tuning of future high energy linear accelerators. The purpose of this study was to explore how start-to-end simulations could be used to optimize two important measures of beam quality, namely maximizing energy gain and minimizing transverse emittance growth in a 2 cm long plasma. These two beam parameters were investigated with an in-depth model of the FACET-II accelerator using numerical optimization. The results presented in the paper demonstrate the importance of utilizing beam-transport simulations in tandem with particle-in-cell simulations and provide insight into optimizing these two important beam parameters without the need to devote significant accelerator physics time tuning the FACET-II accelerator. 

Photocathodes at Negative Electron Affinity (NEA), like GaAs and GaN, allow for efficient production of spin-polarized electrons. When activated to NEA with cesium and an oxidant, they are characterized by an extreme sensitivity to chemical poisoning, resulting in a short operational lifetime. In this work, we demonstrate that deposition of a cesium iodide (CsI) layer can be used to enhance the dark lifetime of both GaN and GaAs photocathodes activated with cesium. The mechanism behind this improvement is investigated using X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM) techniques.